Please use this identifier to cite or link to this item:
|Title:||Epitaxial growth of γ-Fe2O3 thin films on MgO substrates by pulsed laser deposition and their properties||Authors:||Huang, X.L.
Pulsed laser deposition
|Issue Date:||Jan-2013||Citation:||Huang, X.L., Yang, Y., Ding, J. (2013-01). Epitaxial growth of γ-Fe2O3 thin films on MgO substrates by pulsed laser deposition and their properties. Acta Materialia 61 (2) : 548-557. ScholarBank@NUS Repository. https://doi.org/10.1016/j.actamat.2012.10.003||Abstract:||Epitaxial γ-Fe2O3 films were fabricated by pulsed laser deposition at 350 °C in an oxygen-rich atmosphere onto a (0 0 1) or (1 1 0) MgO substrate utilizing the substrate template effect, while the corundum structure α-Fe2O3 was obtained when the same experiment was conducted using sapphire or quartz substrate. X-ray photoelectron spectroscopy analysis and low-temperature SQUID measurements confirmed the formation of γ-Fe2O3. After annealing at 500 °C for 1 h under oxygen atmosphere, the γ-Fe2O 3 phase was still maintained. The saturation magnetization (M s) of the γ-Fe2O3 film was around 400 emu cm-3 for films 10-50 nm thick, which is in agreement with the bulk value. The ultrathin films showed an enhanced Ms value (489 emu cm -3). In particular, the Ms of the 5 nm thin film did not diminish even if it was subjected to high-temperature annealing due to the stabilizing effect of the epitaxial growth. The thin films obtained had a flat surface, which is desired for spin filter and other applications. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.||Source Title:||Acta Materialia||URI:||http://scholarbank.nus.edu.sg/handle/10635/86311||ISSN:||13596454||DOI:||10.1016/j.actamat.2012.10.003|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 16, 2019
WEB OF SCIENCETM
checked on Apr 9, 2019
checked on Apr 21, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.