Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.cap.2011.11.016
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dc.titleEffects of rapid thermal annealing on structural, magnetic and optical properties of Ni-doped ZnO thin films
dc.contributor.authorZhao, X.
dc.contributor.authorLiu, E.
dc.contributor.authorRamanujan, R.V.
dc.contributor.authorChen, J.
dc.date.accessioned2014-10-07T09:48:49Z
dc.date.available2014-10-07T09:48:49Z
dc.date.issued2012-05
dc.identifier.citationZhao, X., Liu, E., Ramanujan, R.V., Chen, J. (2012-05). Effects of rapid thermal annealing on structural, magnetic and optical properties of Ni-doped ZnO thin films. Current Applied Physics 12 (3) : 834-840. ScholarBank@NUS Repository. https://doi.org/10.1016/j.cap.2011.11.016
dc.identifier.issn15671739
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86277
dc.description.abstractXPS depth profiles were used to investigate the effects of rapid thermal annealing under varying conditions on the structural, magnetic and optical properties of Ni-doped ZnO thin films. Oxidization of metallic Ni from its metallic state to two-valence oxidation state occurred in the film annealed in air at 600°C, while reduction of Ni 2+ from its two-valence oxidation state to metallic state occurred in the film annealed in Ar at 600 and 800°C. In addition, there appeared to be significant diffusion of Ni from the bottom to the top surface of the film during annealing in Ar at 800°C. Both as-deposited and annealed thin films displayed obvious room temperature ferromagnetism (RTFM) which was from metallic Ni, Ni 2+ or both with two distinct mechanisms. Furthermore, a significant improvement in saturation magnetization (M s) in the films was observed after annealing in air (M s = 0.036 μ B/Ni) or Ar (M s = 0.033 μ B/Ni) at 600°C compared to that in as-deposited film (M s = 0.017 μ B/Ni). An even higher M s value was observed in the film annealed in Ar at 800°C (M s = 0.055 μ B/Ni) compared to that at 600°C mainly due to the diffusion of Ni. The ultraviolet emission of the Ni-doped ZnO thin film was restored during annealing in Ar at 800°C, which was also attributed to the diffusion of Ni. © 2011 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.cap.2011.11.016
dc.sourceScopus
dc.subjectAnnealing
dc.subjectFerromagnetism
dc.subjectNi-doped ZnO thin film
dc.subjectPhotoluminescence
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1016/j.cap.2011.11.016
dc.description.sourcetitleCurrent Applied Physics
dc.description.volume12
dc.description.issue3
dc.description.page834-840
dc.identifier.isiut000300715000041
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