Please use this identifier to cite or link to this item:
|Title:||Effect of bilayer structure and a SrRuO 3 buffer layer on ferroelectric properties of BiFeO 3 thin films||Authors:||Wu, J.
|Issue Date:||Oct-2012||Citation:||Wu, J., Qiao, S., Pu, C., Xiao, D., Wang, J., Zhu, J. (2012-10). Effect of bilayer structure and a SrRuO 3 buffer layer on ferroelectric properties of BiFeO 3 thin films. Applied Physics A: Materials Science and Processing 109 (1) : 57-61. ScholarBank@NUS Repository. https://doi.org/10.1007/s00339-012-7064-6||Abstract:||Effects of the BiFe 0.95Mn 0.05O 3 thickness and a SrRuO 3 (SRO) buffer layer on the microstructure and electrical properties of BiFeO 3/BiFe 0.95Mn 0.05O 3 (BFO/BFMO) bilayered thin films were investigated, where BFO/BFMO bilayered thin films were fabricated on the SRO/Pt/Ti/SiO 2/Si(100) substrate by a radio frequency sputtering. All thin films are of a pure perovskite structure with a mixture of (110) and (111) orientations regardless of the BFMO layer thickness. Dense microstructure is demonstrated in all thin films because of the introduction of BFMO layers. The SRO buffer layer can also further improve the ferroelectric properties of BFO/BFMO bilayered thin films as compared with those of these thin films without a SRO buffer layer. The BFO/BFMO bilayered thin film with a thickness ratio of 220/120 has an enhanced ferroelectric behavior of 2P r∼165.23 μC/cm 2 and 2E c∼518.56 kV/cm, together with a good fatigue endurance. Therefore, it is an effective way to enhance the ferroelectric and fatigue properties of bismuth ferrite thin films by constructing such a bilayered structure and using a SRO buffer layer. © 2012 Springer-Verlag.||Source Title:||Applied Physics A: Materials Science and Processing||URI:||http://scholarbank.nus.edu.sg/handle/10635/86267||ISSN:||09478396||DOI:||10.1007/s00339-012-7064-6|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Aug 16, 2019
WEB OF SCIENCETM
checked on Aug 9, 2019
checked on Aug 17, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.