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|Title:||Crystallization-induced stress in thin phase change films of different thicknesses||Authors:||Guo, Q.
|Issue Date:||2008||Citation:||Guo, Q., Li, M., Li, Y., Shi, L., Chong, T.C., Kalb, J.A., Thompson, C.V. (2008). Crystallization-induced stress in thin phase change films of different thicknesses. Applied Physics Letters 93 (22) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3040314||Abstract:||We have studied crystallization-induced stress in phase change films (Ge2Sb2Te5) as a function of thickness and with and without a capping layer, by measuring the deflection of microcantilevers. The stress is found to increase with decreasing film thickness. A thin dielectric capping layer leads to a further increase in stress compared to uncapped films. This observation can be explained by the suppression of stress relaxation in the phase change film in the presence of a capping layer. High stress will affect device performance as the size of phase change memory cells decreases. © 2008 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/86244||ISSN:||00036951||DOI:||10.1063/1.3040314|
|Appears in Collections:||Staff Publications|
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