Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1862311
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dc.titleA study of conduction in the transition zone between homologous and ZnO-rich regions in the In 2 O 3 -ZnO system
dc.contributor.authorKumar, B.
dc.contributor.authorGong, H.
dc.contributor.authorAkkipeddi, R.
dc.date.accessioned2014-10-07T09:47:40Z
dc.date.available2014-10-07T09:47:40Z
dc.date.issued2005
dc.identifier.citationKumar, B., Gong, H., Akkipeddi, R. (2005). A study of conduction in the transition zone between homologous and ZnO-rich regions in the In 2 O 3 -ZnO system. Journal of Applied Physics 97 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1862311
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86179
dc.description.abstractIndium zinc oxide thin films were deposited by radio-frequency cosputtering and characterized by x-ray photoelectron spectroscopy (XPS), x-ray diffraction, energy dispersion x-ray spectrometry, Hall-effect measurement, and spectrophotometry techniques. All the films have zinc (zinc+indium) atomic ratio (define as M ratio) higher than 0.60 and exhibited n -type degenerate semiconductor behavior irrespective of their composition. The conductive films have been observed to have a very wide transmittance window (300-2000 nm). An XPS analysis revealed a diminishing oxygen vacancy contribution to carrier concentration with an increase in the M ratio. However, we observed a gradual decrease in carrier concentration until M ratio of 0.79 and then, a significant rise in carrier concentration for M ratio of 0.84, and this was attributed to the replacement of zinc from its lattice position by indium. The XPS studies also revealed asymmetry in zinc 2 p32 peak, which might be associated with the structure of this ternary system. The effect of the effective mass on the optical band gap of the films was also observed and discussed further. © 2005 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1862311
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1063/1.1862311
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume97
dc.description.issue6
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000227767700038
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