Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4790380
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dc.titleA giant polarization value of Zn and Mn co-modified bismuth ferrite thin films
dc.contributor.authorWu, J.
dc.contributor.authorQiao, S.
dc.contributor.authorWang, J.
dc.contributor.authorXiao, D.
dc.contributor.authorZhu, J.
dc.date.accessioned2014-10-07T09:47:32Z
dc.date.available2014-10-07T09:47:32Z
dc.date.issued2013-02-04
dc.identifier.citationWu, J., Qiao, S., Wang, J., Xiao, D., Zhu, J. (2013-02-04). A giant polarization value of Zn and Mn co-modified bismuth ferrite thin films. Applied Physics Letters 102 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4790380
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86168
dc.description.abstractA giant remanent polarization of BiFeO3 thin films is obtained by introducing Zn and Mn, and Bi(Fe0.93Mn0.05Zn 0.02)O3 (BFMZO) thin films were prepared on SrRuO 3-buffered silicon substrates by the radio-frequency sputtering. An (111) orientation is induced in such a film because of the introduction of an SrRuO3 buffer layer. An enhanced ferroelectric behavior of 2P r ∼ 235 μC/cm2 and 2Ec ∼ 612 kV/cm is observed in BFMZO thin films, together with a fatigue-free behavior. As a result, the introduction of Zn and Mn is a good way to improve the electrical behavior of BiFeO3 thin films. © 2013 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4790380
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/1.4790380
dc.description.sourcetitleApplied Physics Letters
dc.description.volume102
dc.description.issue5
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000314770300071
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