Preparation of (0 0 1)-oriented PZT thin films on silicon wafers using pulsed laser deposition

Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0022-0248(01)00865-X

Title:	Preparation of (0 0 1)-oriented PZT thin films on silicon wafers using pulsed laser deposition
Authors:	Zhao, J. Lu, L. Thompson, C.V. Lu, Y.F. Song, W.D.
Keywords:	A3. Laser epitaxy A3. Pulsed laser deposition
Issue Date:	May-2001
Citation:	Zhao, J., Lu, L., Thompson, C.V., Lu, Y.F., Song, W.D. (2001-05). Preparation of (0 0 1)-oriented PZT thin films on silicon wafers using pulsed laser deposition. Journal of Crystal Growth 225 (2-4) : 173-177. ScholarBank@NUS Repository. https://doi.org/10.1016/S0022-0248(01)00865-X
Abstract:	Completely (0 0 1)-oriented Pb(Zr0.52Ti0.48)O3 (PZT) thin films deposited on (1 0 0)-silicon wafers with SrTiO3 (STO)/MgO as a buffer layer system and YBCO as a electrode, were prepared by using KrF excimer pulsed-laser deposition. The epitaxial relationships, i.e. PZT(0 0 1)∥YBCO(0 0 1)∥SrTiO3(1 0 0)∥MgO(1 0 0)∥Si(1 0 0) and PZT(1 1 0) ∥YBCO(1 1 0)∥SrTiO3(0 1 1)∥MgO(0 1 1) were detected using X-ray θ-2θ scans and pole figures or φ-scans. Grain size and surface morphologies of the as-prepared films were examined using atomic force microscopy and scanning electron microscopy. © 2001 Published by Elsevier Science B.V.
Source Title:	Journal of Crystal Growth
URI:	http://scholarbank.nus.edu.sg/handle/10635/86060
ISSN:	00220248
DOI:	10.1016/S0022-0248(01)00865-X
Appears in Collections:	Staff Publications

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