High coercivity co-ferrite thin films on SiO2 (100) substrate prepared by sputtering and PLD

Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMAG.2005.854946

Title:	High coercivity co-ferrite thin films on SiO2 (100) substrate prepared by sputtering and PLD
Authors:	Yin, J. Ding, J. Liu, B. Wang, Y. Yi, J. Chen, J. Miao, X.
Keywords:	Co-ferrite High coercivity Pulsed laser deposition Sputtering
Issue Date:	Oct-2005
Citation:	Yin, J., Ding, J., Liu, B., Wang, Y., Yi, J., Chen, J., Miao, X. (2005-10). High coercivity co-ferrite thin films on SiO2 (100) substrate prepared by sputtering and PLD. IEEE Transactions on Magnetics 41 (10) : 3904-3906. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2005.854946
Abstract:	Co-ferrite thin films with high coercivity were deposited on SiO 2 single crystal substrates by sputtering and pulsed laser deposition (PLD). All the films were subsequently annealed at a temperature from 500°C to 1200°C. Magnetic properties were found to be strongly related to annealing temperature, substrate, thickness and thin film deposition methods. A coercivity as high as 9.3 kOe was achieved in the 50 nm film after annealing at 900°C for 15 min deposited on (100)-SiO2 substrate using sputtering. The high coercivity was associated with the nano-structure, relatively large micro-strain, and a high density of defects. © 2005 IEEE.
Source Title:	IEEE Transactions on Magnetics
URI:	http://scholarbank.nus.edu.sg/handle/10635/85984
ISSN:	00189464
DOI:	10.1109/TMAG.2005.854946
Appears in Collections:	Staff Publications

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