Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMAG.2005.854946
Title: High coercivity co-ferrite thin films on SiO2 (100) substrate prepared by sputtering and PLD
Authors: Yin, J.
Ding, J. 
Liu, B. 
Wang, Y.
Yi, J. 
Chen, J.
Miao, X.
Keywords: Co-ferrite
High coercivity
Pulsed laser deposition
Sputtering
Issue Date: Oct-2005
Citation: Yin, J., Ding, J., Liu, B., Wang, Y., Yi, J., Chen, J., Miao, X. (2005-10). High coercivity co-ferrite thin films on SiO2 (100) substrate prepared by sputtering and PLD. IEEE Transactions on Magnetics 41 (10) : 3904-3906. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2005.854946
Abstract: Co-ferrite thin films with high coercivity were deposited on SiO 2 single crystal substrates by sputtering and pulsed laser deposition (PLD). All the films were subsequently annealed at a temperature from 500°C to 1200°C. Magnetic properties were found to be strongly related to annealing temperature, substrate, thickness and thin film deposition methods. A coercivity as high as 9.3 kOe was achieved in the 50 nm film after annealing at 900°C for 15 min deposited on (100)-SiO2 substrate using sputtering. The high coercivity was associated with the nano-structure, relatively large micro-strain, and a high density of defects. © 2005 IEEE.
Source Title: IEEE Transactions on Magnetics
URI: http://scholarbank.nus.edu.sg/handle/10635/85984
ISSN: 00189464
DOI: 10.1109/TMAG.2005.854946
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