Please use this identifier to cite or link to this item:
|Title:||Surface roughness measurement of semi-conductor wafers using a modified total integrated scattering model||Authors:||Tay, C.J.
Total integrated scattering (TIS)
|Issue Date:||2002||Citation:||Tay, C.J.,Wang, S.H.,Quan, C.,Ng, C.K. (2002). Surface roughness measurement of semi-conductor wafers using a modified total integrated scattering model. Optik (Jena) 113 (7) : 317-321. ScholarBank@NUS Repository.||Abstract:||Light scattering is a non-contact technique which can be used for characterizing the topography of smooth reflecting surfaces. A proposed technique which incorporates a modified Total Integrated Scattering (TIS) model for surface roughness measurement of semi-conductor wafers has been developed. The technique employs a low power He-Ne laser and incorporates conventional optical components to record surface roughness in the nanometer range (Ra < 45 nm) with a high degree of accuracy. Principle of the technique and the experimental arrangement are described. Results obtained using the proposed technique are compared with those using the conventional direct contact method.||Source Title:||Optik (Jena)||URI:||http://scholarbank.nus.edu.sg/handle/10635/85710||ISSN:||00304026|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 14, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.