Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2003.812143
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dc.titlePhysical and electrical characteristics of HfN gate electrode for advanced MOS devices
dc.contributor.authorYu, H.Y.
dc.contributor.authorLim, H.F.
dc.contributor.authorChen, J.H.
dc.contributor.authorLi, M.F.
dc.contributor.authorZhu, C.
dc.contributor.authorTung, C.H.
dc.contributor.authorDu, A.Y.
dc.contributor.authorWang, W.D.
dc.contributor.authorChi, D.Z.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:52:28Z
dc.date.available2014-10-07T04:52:28Z
dc.date.issued2003-04
dc.identifier.citationYu, H.Y., Lim, H.F., Chen, J.H., Li, M.F., Zhu, C., Tung, C.H., Du, A.Y., Wang, W.D., Chi, D.Z., Kwong, D.-L. (2003-04). Physical and electrical characteristics of HfN gate electrode for advanced MOS devices. IEEE Electron Device Letters 24 (4) : 230-232. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.812143
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84420
dc.description.abstractIn this letter, the physical and electrical properties of physical vapor deposited (PVD) hafnium nitride (HfN) is studied for the first time as the metal gate electrode for advanced MOS devices applications. It is found that HfN possesses a midgap work function in tantalum nitride (TaN)/HfN/SiO2/Si MOS structures. TaN/HfN stacked metal-gated MOS capacitors exhibit negligible variations on equivalent oxide thickness (EOT), leakage current, and work function upon high-temperature treatments (up to 1000°C), demonstrating the excellent thermal stability of HfN metal gate on SiO2. Our results suggest that HfN metal electrode is an ideal candidate for the fully depleted SOI and/or symmetric double gate MOS devices application.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2003.812143
dc.sourceScopus
dc.subjectHfN
dc.subjectMetal gate
dc.subjectMidgap work function
dc.subjectMOSFET's
dc.subjectTaN
dc.typeOthers
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2003.812143
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume24
dc.description.issue4
dc.description.page230-232
dc.description.codenEDLED
dc.identifier.isiut000183670900009
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