Please use this identifier to cite or link to this item:
|Title:||A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET||Authors:||Ang, D.S.
|Keywords:||Charge pumping (CP) current
Neutral electron trap
|Issue Date:||Sep-2003||Citation:||Ang, D.S., Ling, C.H. (2003-09). A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET. IEEE Electron Device Letters 24 (9) : 598-600. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.815942||Abstract:||In deep submicrometer N-MOSFET, a "backdrop" of substantial defect generation by the quasi-static Vg = Vd stress phase is shown to significantly influence the accuracy of interpretation of ac stress data. If neglected, a severe overestimation of ac stress induced degradation would result. Through an approach that eliminates this damage component from the overall ac stress damage, increased parametric shifts, associated with the gate pulse transition phase, are found to occur in different time windows, delineated by the relative importance of hot-hole and hot-electron induced damage at different stages of the stress, the interaction between the two damages at specific stages of the stress, as well as the sensitivities of the device parameters to the spatial evolution of the two damages.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/84385||ISSN:||07413106||DOI:||10.1109/LED.2003.815942|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.