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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/84342
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dc.titleUniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology
dc.contributor.authorGong, X.
dc.contributor.authorHan, G.
dc.contributor.authorSu, S.
dc.contributor.authorCheng, R.
dc.contributor.authorGuo, P.
dc.contributor.authorBai, F.
dc.contributor.authorYang, Y.
dc.contributor.authorZhou, Q.
dc.contributor.authorLiu, B.
dc.contributor.authorGoh, K.H.
dc.contributor.authorZhang, G.
dc.contributor.authorXue, C.
dc.contributor.authorCheng, B.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:51:35Z
dc.date.available2014-10-07T04:51:35Z
dc.date.issued2013
dc.identifier.citationGong, X.,Han, G.,Su, S.,Cheng, R.,Guo, P.,Bai, F.,Yang, Y.,Zhou, Q.,Liu, B.,Goh, K.H.,Zhang, G.,Xue, C.,Cheng, B.,Yeo, Y.-C. (2013). Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology. Digest of Technical Papers - Symposium on VLSI Technology : T34-T35. ScholarBank@NUS Repository.
dc.identifier.isbn9784863483477
dc.identifier.issn07431562
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84342
dc.description.abstractWe report the first demonstration of gate-all-around (GAA) GeSn nanowire (NW) pFETs. The uniaxially compressive strained GeSn NW with a width of 50 nm and a height of 35 nm was fabricated using a CMOS compatible top-down approach. The GeSn GAA NW pFETs with the shortest reported channel length LCH down to 100 nm were realized, and the devices achieve a record high peak intrinsic transconductance Gm,int of 573 μS/μm at V DS of -1.0 V for GeSn pFETs. © 2013 JSAP.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleDigest of Technical Papers - Symposium on VLSI Technology
dc.description.pageT34-T35
dc.description.codenDTPTE
dc.identifier.isiutNOT_IN_WOS
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