Please use this identifier to cite or link to this item:
https://doi.org/10.1109/NANO.2007.4601137
DC Field | Value | |
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dc.title | Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowire | |
dc.contributor.author | Whang, S.J. | |
dc.contributor.author | Lee, S.J. | |
dc.contributor.author | Yang, W.F. | |
dc.contributor.author | Cho, B.J. | |
dc.contributor.author | Liew, Y.F. | |
dc.contributor.author | Kwong, D.L. | |
dc.date.accessioned | 2014-10-07T04:50:43Z | |
dc.date.available | 2014-10-07T04:50:43Z | |
dc.date.issued | 2007 | |
dc.identifier.citation | Whang, S.J., Lee, S.J., Yang, W.F., Cho, B.J., Liew, Y.F., Kwong, D.L. (2007). Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowire. 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings : 45-48. ScholarBank@NUS Repository. https://doi.org/10.1109/NANO.2007.4601137 | |
dc.identifier.isbn | 1424406080 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/84266 | |
dc.description.abstract | We present a successful synthesis of single crystalline homogeneous Si 1-xGex nanowires (diameter: 7 - 52nm) via vaporliquid-solid mechanism. Results show that quality, density, and growth rate of Si1-xGex nanowires are greatly affected by the growth temperature and the single crystalline Si1-xGex nanowires without amorphous sheath layer can be obtained at optimized growth temperature. Control of the amount of Ge in nanowire was obtained with different GeH 4 gas flow rates. Using backgated field effect transistor integrated with HfO2 gate dielectric, TaN/Ta metal gate and Pd source/drain electrode, Si1-xGex nanowire transistor exhibits p-MOS operation with Ion/Ioff ∼ 104, sub-threshold swing of 97 mV/dec. © 2007 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/NANO.2007.4601137 | |
dc.source | Scopus | |
dc.subject | High-k | |
dc.subject | MOSFET | |
dc.subject | Nanowire | |
dc.subject | SiGe | |
dc.subject | VLS | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/NANO.2007.4601137 | |
dc.description.sourcetitle | 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings | |
dc.description.page | 45-48 | |
dc.identifier.isiut | 000261434900010 | |
Appears in Collections: | Staff Publications |
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