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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1558254
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dc.titleSubmicron Co(TaC) line array produced by electron-beam direct writing
dc.contributor.authorZhao, Y.
dc.contributor.authorZhou, T.J.
dc.contributor.authorWang, J.P.
dc.contributor.authorThong, J.T.L.
dc.contributor.authorYao, X.F.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-10-07T04:50:36Z
dc.date.available2014-10-07T04:50:36Z
dc.date.issued2003-05-15
dc.identifier.citationZhao, Y., Zhou, T.J., Wang, J.P., Thong, J.T.L., Yao, X.F., Chong, T.C. (2003-05-15). Submicron Co(TaC) line array produced by electron-beam direct writing. Journal of Applied Physics 93 (10 2) : 7417-7419. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1558254
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84256
dc.description.abstractThe preparation of (Co60C40)97Ta3 and Co60C40 films with thickness 30 nm was performed by cosputtering Co, Ta and C onto C-buffered glass substrates. It was found that the films became magnetic upon annealing. At the same annealing condition, the magnetic performance of annealed (Co60C40)97Ta3 films were better than that of annealed Co60C40 films.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1558254
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1558254
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume93
dc.description.issue10 2
dc.description.page7417-7419
dc.description.codenJAPIA
dc.identifier.isiut000182822300329
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