Please use this identifier to cite or link to this item:
|Title:||Study of large-grained n-type polycrystalline silicon thin films made by the solid phase crystallization method||Authors:||Kumar, A.
|Issue Date:||2013||Citation:||Kumar, A.,Widenborg, P.I.,Law, F.,Hidayat, H.,Dalapati, G.K.,Aberle, A.G. (2013). Study of large-grained n-type polycrystalline silicon thin films made by the solid phase crystallization method. Conference Record of the IEEE Photovoltaic Specialists Conference : 586-588. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2013.6744219||Abstract:||N-type polycrystalline silicon (poly-Si) films with large grains exceeding 30 μm in width are successfully prepared by the solid phase crystallization (SPC) technique on glass through a control of the PH3 gas flow rate. The grains in the poly-Si films are investigated by electron backscatter diffraction (EBSD) and are found to be randomly oriented, whereby the average grain size ranges from 4.3 to 18 μm. The grain size in the poly-Si film increases with increasing PH3 gas flow rate. The impact of the PH3 flow rate on the crystal quality and the electronic properties of the poly-Si thin-film solar cells are systematically investigated using UV reflectance and Hall effect measurements. A Hall mobility of about 71.5 cm 2/Vs for n+ doped poly-Si films with a carrier concentration of 2.3×1019 cm-3 is obtained. © 2013 IEEE.||Source Title:||Conference Record of the IEEE Photovoltaic Specialists Conference||URI:||http://scholarbank.nus.edu.sg/handle/10635/84250||ISBN:||9781479932993||ISSN:||01608371||DOI:||10.1109/PVSC.2013.6744219|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 5, 2019
checked on Nov 30, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.