Please use this identifier to cite or link to this item: https://doi.org/10.1109/VTSA.2008.4530829
DC FieldValue
dc.titleStrained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content
dc.contributor.authorLiow, T.-Y.
dc.contributor.authorTan, K.-M.
dc.contributor.authorWeeks, D.
dc.contributor.authorLee, R.T.P.
dc.contributor.authorZhu, M.
dc.contributor.authorHoe, K.-M.
dc.contributor.authorTung, C.-H.
dc.contributor.authorBauer, M.
dc.contributor.authorSpear, J.
dc.contributor.authorThomas, S.G.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:50:17Z
dc.date.available2014-10-07T04:50:17Z
dc.date.issued2008
dc.identifier.citationLiow, T.-Y., Tan, K.-M., Weeks, D., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Bauer, M., Spear, J., Thomas, S.G., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2008). Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon content. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 126-127. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2008.4530829
dc.identifier.isbn9781424416158
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84230
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/VTSA.2008.4530829
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/VTSA.2008.4530829
dc.description.sourcetitleInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
dc.description.page126-127
dc.identifier.isiut000256564900058
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