Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.apsusc.2004.03.116
DC Field | Value | |
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dc.title | SIMS study on N diffusion in hafnium oxynitride | |
dc.contributor.author | Gui, D. | |
dc.contributor.author | Kang, J. | |
dc.contributor.author | Yu, H. | |
dc.contributor.author | Lim, H.F. | |
dc.date.accessioned | 2014-10-07T04:49:47Z | |
dc.date.available | 2014-10-07T04:49:47Z | |
dc.date.issued | 2004-06-15 | |
dc.identifier.citation | Gui, D., Kang, J., Yu, H., Lim, H.F. (2004-06-15). SIMS study on N diffusion in hafnium oxynitride. Applied Surface Science 231-232 : 590-593. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2004.03.116 | |
dc.identifier.issn | 01694332 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/84186 | |
dc.description.abstract | As the MOS device feature size continues to shrink, novel high-k gate dielectrics should be adopted to reduce the unacceptable high gate leakage current due to direct tunneling. HfO2 is one of the most promising high-k materials. It was reported that HfNxOy formed by incorporating N into HfO2 could improve the thermal stability and electrical properties of the gate dielectric films. However, N loss can occur due to subsequent high temperature processes, such as rapid thermal processing (RTP). It is necessary to understand the mechanism of N loss from the academic and application points of view. In this study, SIMS was applied to investigate the N diffusion behavior in sputter-deposited HfNxOy after RTP processing. The results showed that N loss is due to out-diffusion of N to the surface. On the other hand, segregation of N at the interface of HfN xOy/Si was observed. N acts as a good barrier to O diffusion from HfNxOy to Si. The results show that oxygen flooding is unfavorable for characterizing N in HfNxOy/Si since oxygen flooding can enhance the N background. © 2004 Elsevier B.V. All rights reserved. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.apsusc.2004.03.116 | |
dc.source | Scopus | |
dc.subject | Diffusion | |
dc.subject | Hafnium oxynitride | |
dc.subject | High-k | |
dc.subject | Segregation | |
dc.subject | SIMS | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1016/j.apsusc.2004.03.116 | |
dc.description.sourcetitle | Applied Surface Science | |
dc.description.volume | 231-232 | |
dc.description.page | 590-593 | |
dc.description.coden | ASUSE | |
dc.identifier.isiut | 000222427700115 | |
Appears in Collections: | Staff Publications |
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