Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3203958
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dc.titleSiliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage
dc.contributor.authorKoh, S.-M.
dc.contributor.authorZhou, W.J.
dc.contributor.authorLee, R.T.P.
dc.contributor.authorSinha, M.
dc.contributor.authorNg, C.-M.
dc.contributor.authorZhao, Z.
dc.contributor.authorMaynard, H.
dc.contributor.authorVariam, N.
dc.contributor.authorErokhin, Y.
dc.contributor.authorSamudra, G.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:49:45Z
dc.date.available2014-10-07T04:49:45Z
dc.date.issued2009
dc.identifier.citationKoh, S.-M., Zhou, W.J., Lee, R.T.P., Sinha, M., Ng, C.-M., Zhao, Z., Maynard, H., Variam, N., Erokhin, Y., Samudra, G., Yeo, Y.-C. (2009). Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage. ECS Transactions 25 (7) : 211-216. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3203958
dc.identifier.isbn9781566777445
dc.identifier.issn19385862
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84183
dc.description.abstractWe report two distinct approaches to reduce leakage and parasitic resistance in Silicon:Carbon (Si:C) region. First, the effectiveness of a low-thermal budget post-Solid-Phase-Epitaxy (post-SPE) anneal in the suppression of leakages is examined. Second, we have developed a novel nickel-aluminide suicide (NiAlSirC) with dopant-segregation (DS) technology to reduce the Schottky-Barrier height (SBH) for Si:C contacts. An optimum 18% substitutional incorporation of Al in the suicide matrix leads to a 10% reduction in the intrinsic SBH of NiSi:C. A low electron schottky barrier Φ n B of 0.118 eV was attained with NiAlSi:C contacts on phosphorous-segregated regions. The results on Si:C establish a technique to achieve low leakage, low SBH for low contact resistance and low sheet resistance for Si:C S/D application. © The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.3203958
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/1.3203958
dc.description.sourcetitleECS Transactions
dc.description.volume25
dc.description.issue7
dc.description.page211-216
dc.identifier.isiut000338102400019
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