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|Title:||Silicidation using nickel and Dysprosium stack on Si(100): NiSi 2 formation and impact on Schottky Barrier Height||Authors:||Lim, P.S.Y.
|Issue Date:||2011||Citation:||Lim, P.S.Y.,Zhou, Q.,Chi, D.,Yeo, Y.-C. (2011). Silicidation using nickel and Dysprosium stack on Si(100): NiSi 2 formation and impact on Schottky Barrier Height. 2011 International Semiconductor Device Research Symposium, ISDRS 2011 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ISDRS.2011.6135352||Abstract:||High contact resistance R c at the silicide/semiconductor interface could limit the drive current in Field Effect Transistors (FETs) at sub-22 nm technology nodes. 1 For n-channel FETs, lowering the effective electron Schottky Barrier Height B n at the silicide/semiconductor interface will reduce R c. Incorporating rare earth materials such as Dysprosium (Dy) during nickel silicidation to form Ni-Dy alloy contacts 2 has been reported to lower B n. Previously, the B n lowering was attributed to the formation of a Dy-rich interlayer between the silicide and semiconductor. In this paper, we report new findings that NiSi 2 formation is the main reason for the reduction in B n for Dy-incorporated Ni silicides. © 2011 IEEE.||Source Title:||2011 International Semiconductor Device Research Symposium, ISDRS 2011||URI:||http://scholarbank.nus.edu.sg/handle/10635/84178||ISBN:||9781457717550||DOI:||10.1109/ISDRS.2011.6135352|
|Appears in Collections:||Staff Publications|
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