Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2011.6131648
DC FieldValue
dc.titleSelf-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials
dc.contributor.authorTran, X.A.
dc.contributor.authorGao, B.
dc.contributor.authorKang, J.F.
dc.contributor.authorWu, X.
dc.contributor.authorWu, L.
dc.contributor.authorFang, Z.
dc.contributor.authorWang, Z.R.
dc.contributor.authorPey, K.L.
dc.contributor.authorYeo, Y.C.
dc.contributor.authorDu, A.Y.
dc.contributor.authorLiu, M.
dc.contributor.authorNguyen, B.Y.
dc.contributor.authorLi, M.F.
dc.contributor.authorYu, H.Y.
dc.date.accessioned2014-10-07T04:49:35Z
dc.date.available2014-10-07T04:49:35Z
dc.date.issued2011
dc.identifier.citationTran, X.A.,Gao, B.,Kang, J.F.,Wu, X.,Wu, L.,Fang, Z.,Wang, Z.R.,Pey, K.L.,Yeo, Y.C.,Du, A.Y.,Liu, M.,Nguyen, B.Y.,Li, M.F.,Yu, H.Y. (2011). Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials. Technical Digest - International Electron Devices Meeting, IEDM : 31.2.1-31.2.4. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2011.6131648" target="_blank">https://doi.org/10.1109/IEDM.2011.6131648</a>
dc.identifier.isbn9781457705052
dc.identifier.issn01631918
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84169
dc.description.abstractIn this paper, we report a high performance, forming-free and self-rectifying unipolar HfO x based RRAM fabricated by fab-available materials. Highlight of the demonstrated RRAM include 1) CMOS technology friendly materials and process, 2) excellent self-rectifying behavior in LRS (>10 3 @ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices (number of word-line >10 6 for worst case condition). © 2011 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IEDM.2011.6131648
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/IEDM.2011.6131648
dc.description.sourcetitleTechnical Digest - International Electron Devices Meeting, IEDM
dc.description.page31.2.1-31.2.4
dc.description.codenTDIMD
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.