Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3487634
Title: Self-aligned NiGeSi contacts on gallium arsenide for III-V MOSFETs
Authors: Zhang, X.
Guo, H.
Chin, H.-C.
Gong, X.
Lim, P.S.Y.
Yeo, Y.-C. 
Issue Date: 2010
Citation: Zhang, X., Guo, H., Chin, H.-C., Gong, X., Lim, P.S.Y., Yeo, Y.-C. (2010). Self-aligned NiGeSi contacts on gallium arsenide for III-V MOSFETs. ECS Transactions 33 (6) : 1021-1028. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3487634
Abstract: We developed a Nickel Germanide (NiGe) based self-aligned contact technology for GaAs n-MOSFETs. The self-aligned contact metallization process is salicide-like and is compatible with III-V materials and processes. It comprises selective epitaxy of Germanium-Silicon (GeSi) on n+ doped GaAs region and a two-step metallization process for forming Nickel-Germanosilicide (NiGeSi) contacts on GaAs. With precise control of the metallization process, NiGeSi contacts on GaAs were fabricated with good ohmic behavior. Contact with smaller contact resistance RC was achieved by optimizing the metallization process. The self-aligned NiGeSi contacts were integrated in GaAs n-MOSFETs which show good output characteristics. ©The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/84166
ISBN: 9781566778251
ISSN: 19385862
DOI: 10.1149/1.3487634
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