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|Title:||Self-aligned NiGeSi contacts on gallium arsenide for III-V MOSFETs||Authors:||Zhang, X.
|Issue Date:||2010||Citation:||Zhang, X., Guo, H., Chin, H.-C., Gong, X., Lim, P.S.Y., Yeo, Y.-C. (2010). Self-aligned NiGeSi contacts on gallium arsenide for III-V MOSFETs. ECS Transactions 33 (6) : 1021-1028. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3487634||Abstract:||We developed a Nickel Germanide (NiGe) based self-aligned contact technology for GaAs n-MOSFETs. The self-aligned contact metallization process is salicide-like and is compatible with III-V materials and processes. It comprises selective epitaxy of Germanium-Silicon (GeSi) on n+ doped GaAs region and a two-step metallization process for forming Nickel-Germanosilicide (NiGeSi) contacts on GaAs. With precise control of the metallization process, NiGeSi contacts on GaAs were fabricated with good ohmic behavior. Contact with smaller contact resistance RC was achieved by optimizing the metallization process. The self-aligned NiGeSi contacts were integrated in GaAs n-MOSFETs which show good output characteristics. ©The Electrochemical Society.||Source Title:||ECS Transactions||URI:||http://scholarbank.nus.edu.sg/handle/10635/84166||ISBN:||9781566778251||ISSN:||19385862||DOI:||10.1149/1.3487634|
|Appears in Collections:||Staff Publications|
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