Please use this identifier to cite or link to this item: https://doi.org/10.1109/ESSDER.2005.1546663
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dc.titleScalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature process
dc.contributor.authorKang, J.F.
dc.contributor.authorYu, H.Y.
dc.contributor.authorRen, C.
dc.contributor.authorYang, H.
dc.contributor.authorSa, N.
dc.contributor.authorLiu, X.Y.
dc.contributor.authorHan, R.Q.
dc.contributor.authorLi, M.-F.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:49:26Z
dc.date.available2014-10-07T04:49:26Z
dc.date.issued2005
dc.identifier.citationKang, J.F., Yu, H.Y., Ren, C., Yang, H., Sa, N., Liu, X.Y., Han, R.Q., Li, M.-F., Chan, D.S.H., Kwong, D.-L. (2005). Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature process. Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference 2005 : 375-378. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDER.2005.1546663
dc.identifier.isbn0780392035
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84155
dc.description.abstractThe scalability and reliability issues of the CVD-HfO2 gate dielectrics with PVD TaN/HfN electrodes, fabricated by a high temperature process, were addressed. The equivalent oxide thickness (EOT) is aggressively scaled down to 0.75 nm and 0.95 nm for MOS capacitor and MOSFET, respectively. Low preexisting traps in the TaN/HfN/HfO2 gate stacks were observed, which could be attributed to the high temperature post gate annealing process. The excellent reliability characteristics were achieved in the TaN/HfN/HfO 2 gate stacks. © 2005 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ESSDER.2005.1546663
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/ESSDER.2005.1546663
dc.description.sourcetitleProceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
dc.description.volume2005
dc.description.page375-378
dc.identifier.isiut000236176200086
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