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Title: Reliability improvement to copper damascene structures using buried capping layer
Authors: Yiang, K.Y.
Yoo, W.J. 
Krishnamoorthy, A.
Issue Date: 2003
Citation: Yiang, K.Y.,Yoo, W.J.,Krishnamoorthy, A. (2003). Reliability improvement to copper damascene structures using buried capping layer. Advanced Metallization Conference (AMC) : 271-275. ScholarBank@NUS Repository.
Abstract: A buried capping layer (BCL) of undoped silicate glass (USG) was incorporated into Cu damascene structures to improve electrical reliability. With carbon-doped silicon oxide (SiOC) as intermetal dielectric, the results showed that a BCL of 100 Å thickness successfully improved breakdown strength two-fold and reduced leakage by 1 order of magnitude to within the specification of 10 -8 A/cm 2 (at 25°C). The incorporated BCL of 100 Å thickness increased the overall parasitic capacitance by merely 2%, compared to conventional structures without BCL. The BCL is therefore a promising candidate in improving the overall electrical reliability of interconnects. © 2004 Materials Research Society.
Source Title: Advanced Metallization Conference (AMC)
ISSN: 15401766
Appears in Collections:Staff Publications

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