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|Title:||Reliability improvement to copper damascene structures using buried capping layer||Authors:||Yiang, K.Y.
|Issue Date:||2003||Citation:||Yiang, K.Y.,Yoo, W.J.,Krishnamoorthy, A. (2003). Reliability improvement to copper damascene structures using buried capping layer. Advanced Metallization Conference (AMC) : 271-275. ScholarBank@NUS Repository.||Abstract:||A buried capping layer (BCL) of undoped silicate glass (USG) was incorporated into Cu damascene structures to improve electrical reliability. With carbon-doped silicon oxide (SiOC) as intermetal dielectric, the results showed that a BCL of 100 Å thickness successfully improved breakdown strength two-fold and reduced leakage by 1 order of magnitude to within the specification of 10 -8 A/cm 2 (at 25°C). The incorporated BCL of 100 Å thickness increased the overall parasitic capacitance by merely 2%, compared to conventional structures without BCL. The BCL is therefore a promising candidate in improving the overall electrical reliability of interconnects. © 2004 Materials Research Society.||Source Title:||Advanced Metallization Conference (AMC)||URI:||http://scholarbank.nus.edu.sg/handle/10635/84134||ISSN:||15401766|
|Appears in Collections:||Staff Publications|
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