Realizing steep subthreshold swing with impact ionization transistors

Please use this identifier to cite or link to this item: https://doi.org/10.1109/VTSA.2009.5159284

Title:	Realizing steep subthreshold swing with impact ionization transistors
Authors:	Yeo, Y.-C.
Issue Date:	2009
Citation:	Yeo, Y.-C. (2009). Realizing steep subthreshold swing with impact ionization transistors. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 43-44. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2009.5159284
Abstract:	Recent developments in Impact Ionization Transistors (I-MOS) will be discussed here, including strained impact ionization transistors realized on the nanowire or multiple-gate device architecture. I-MOS devices achieve excellent subthreshold swings well below 5 mV/decade at room temperature. Techniques for enhancing impact ionization rate and reducing the breakdown voltage V BD for device performance improvement will be discussed. Challenges faced by I-MOS will be highlighted. Some challenges may be addressed through the strain and materials engineering. Limitations of the I-MOS will also be discussed. ©2009 IEEE.
Source Title:	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
URI:	http://scholarbank.nus.edu.sg/handle/10635/84128
ISBN:	9781424427857
DOI:	10.1109/VTSA.2009.5159284
Appears in Collections:	Staff Publications

There are no files associated with this item.

Check