Please use this identifier to cite or link to this item: https://doi.org/10.1109/VTSA.2009.5159284
DC FieldValue
dc.titleRealizing steep subthreshold swing with impact ionization transistors
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:49:08Z
dc.date.available2014-10-07T04:49:08Z
dc.date.issued2009
dc.identifier.citationYeo, Y.-C. (2009). Realizing steep subthreshold swing with impact ionization transistors. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 43-44. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2009.5159284
dc.identifier.isbn9781424427857
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84128
dc.description.abstractRecent developments in Impact Ionization Transistors (I-MOS) will be discussed here, including strained impact ionization transistors realized on the nanowire or multiple-gate device architecture. I-MOS devices achieve excellent subthreshold swings well below 5 mV/decade at room temperature. Techniques for enhancing impact ionization rate and reducing the breakdown voltage V BD for device performance improvement will be discussed. Challenges faced by I-MOS will be highlighted. Some challenges may be addressed through the strain and materials engineering. Limitations of the I-MOS will also be discussed. ©2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/VTSA.2009.5159284
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/VTSA.2009.5159284
dc.description.sourcetitleInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
dc.description.page43-44
dc.identifier.isiut000272451000019
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