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Title: Raman scattering studies of Ge/Si islands under hydrostatic pressure
Authors: Teo, K.L. 
Shen, Z.X. 
Schmidt, O.G.
Issue Date: Nov-2004
Citation: Teo, K.L., Shen, Z.X., Schmidt, O.G. (2004-11). Raman scattering studies of Ge/Si islands under hydrostatic pressure. Physica Status Solidi (B) Basic Research 241 (14) : 3274-3278. ScholarBank@NUS Repository.
Abstract: Raman scattering under hydrostatic pressure is used to investigate the phonon modes of self-assembled Ge islands grown by solid source molecular beam epitaxy. Our results show that the overlapping spectra of the Ge-Ge phonon and Si 2TA modes occur around 304 cm -1 at ambient pressure can be resolved at relatively low pressure of about 3 kbar. The mode Grüneisen parameter of the Ge-Ge phonon mode in quantum dot is found to be γ = 0.84 ± 0.01. The normalized Raman intensity profiles of Ge-Ge mode, exhibits a resonance enhancement peak at 2.37 eV. The pressure coefficient of this resonating electronic transition is ∼2.7 ± 0.5 meV/kbar, which is significantly smaller than the pressure shift of the E 1 transition in bulk Ge. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Source Title: Physica Status Solidi (B) Basic Research
ISSN: 03701972
DOI: 10.1002/pssb.200405239
Appears in Collections:Staff Publications

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