Please use this identifier to cite or link to this item:
Title: Photoemission study of energy band alignment of Ge2Sb 2Te5 and common CMOS materials
Authors: Fang, L.W.-W.
Pan, J.-S.
Lim, A.E.-J.
Lee, R.T.-P. 
Li, M.
Zhao, R.
Shi, L.
Chong, T.-C.
Yeo, Y.-C. 
Issue Date: 2008
Citation: Fang, L.W.-W.,Pan, J.-S.,Lim, A.E.-J.,Lee, R.T.-P.,Li, M.,Zhao, R.,Shi, L.,Chong, T.-C.,Yeo, Y.-C. (2008). Photoemission study of energy band alignment of Ge2Sb 2Te5 and common CMOS materials. Materials Research Society Symposium Proceedings 1072 : 54-60. ScholarBank@NUS Repository.
Abstract: We report the energy band alignment of Ge2Sb2Te 5 and a variety of common complementary-metal-oxide-semiconductor (CMOS) compatible materials. These materials include silicon, silicon oxide, hafnium oxide, silicon nitride as well as nickel suicide. High-resolution X-ray photoelectron spectroscopy was employed as the main tool to obtain the core-level spectra, the valence band spectra, and the energy loss spectra. A precise determination of the valence band offsets of Ge2Sb 2Te5 and the various materials were obtained. The conduction band offsets were then determined. The energy band line-ups of Ge2Sb2Te5 and these CMOS compatible materials were established. © 2008 Materials Research Society.
Source Title: Materials Research Society Symposium Proceedings
ISBN: 9781605608518
ISSN: 02729172
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.