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|Title:||Pd-InGaAs as a new self-aligned contact material on InGaAs||Authors:||Kong, E.Y.-J.
|Issue Date:||2011||Citation:||Kong, E.Y.-J.,Zhang, X.,Ivana,Zhou, Q.,Yeo, Y.-C. (2011). Pd-InGaAs as a new self-aligned contact material on InGaAs. 2011 International Semiconductor Device Research Symposium, ISDRS 2011 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ISDRS.2011.6135216||Abstract:||Introduction. Self-alignment of source/drain (S/D) contacts to the transistor gate is important, as it brings the S/D contacts close to the channel and allows the achievement of low parasitic S/D series resistance R SD. Low R SD is needed for high-mobility and short-channel transistors where the channel resistance is low and external resistance is a significant proportion of the total resistance between source and drain. Fig. 1 illustrates the self-aligned S/D contact metallization process for InGaAs transistors. Recently, the first self-aligned Ni-InGaAs S/D contacts were demonstrated. 1, 2 In this work, Pd-InGaAs is explored as a new self-aligned contact metallization technology. © 2011 IEEE.||Source Title:||2011 International Semiconductor Device Research Symposium, ISDRS 2011||URI:||http://scholarbank.nus.edu.sg/handle/10635/84070||ISBN:||9781457717550||DOI:||10.1109/ISDRS.2011.6135216|
|Appears in Collections:||Staff Publications|
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