Please use this identifier to cite or link to this item: https://doi.org/10.1002/pssc.200778509
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dc.titleOrders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth
dc.contributor.authorZang, K.Y.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-10-07T04:48:19Z
dc.date.available2014-10-07T04:48:19Z
dc.date.issued2008
dc.identifier.citationZang, K.Y., Chua, S.J. (2008). Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth. Physica Status Solidi (C) Current Topics in Solid State Physics 5 (6) : 1585-1588. ScholarBank@NUS Repository. https://doi.org/10.1002/pssc.200778509
dc.identifier.issn18626351
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84059
dc.description.abstractNanoscale laterally epitaxial overgrown (NLEO) GaN layers were investigated on Si (111) substrate. Nanoporous SiO2 films on the surfaces of GaN/Si (111) were fabricated by inductively coupled plasma etching using anodic alumina templates as etch masks. GaN was grown over the nanoporous SiO 2 layer using metalorganic chemical vapor deposition. Supersaturation of the source material was investigated to realize a continuous and smooth film. NLEO GaN layers were found to result in a significant reduction of threading dislocation density ∼108 cm-2, characterized by atomic force microscopy and cross-sectional transmission electron microscopy. High quality GaN nanorod arrays has also been demonstrated and investigated on Si (111) substrates. Nanoscale overgrowth is a promising method to improve the quality of GaN semiconductor materials for the commercialization of GaN devices on Si substrates. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/pssc.200778509
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1002/pssc.200778509
dc.description.sourcetitlePhysica Status Solidi (C) Current Topics in Solid State Physics
dc.description.volume5
dc.description.issue6
dc.description.page1585-1588
dc.identifier.isiut000256695700033
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