Please use this identifier to cite or link to this item:
|Title:||Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth||Authors:||Zang, K.Y.
|Issue Date:||2008||Citation:||Zang, K.Y., Chua, S.J. (2008). Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth. Physica Status Solidi (C) Current Topics in Solid State Physics 5 (6) : 1585-1588. ScholarBank@NUS Repository. https://doi.org/10.1002/pssc.200778509||Abstract:||Nanoscale laterally epitaxial overgrown (NLEO) GaN layers were investigated on Si (111) substrate. Nanoporous SiO2 films on the surfaces of GaN/Si (111) were fabricated by inductively coupled plasma etching using anodic alumina templates as etch masks. GaN was grown over the nanoporous SiO 2 layer using metalorganic chemical vapor deposition. Supersaturation of the source material was investigated to realize a continuous and smooth film. NLEO GaN layers were found to result in a significant reduction of threading dislocation density ∼108 cm-2, characterized by atomic force microscopy and cross-sectional transmission electron microscopy. High quality GaN nanorod arrays has also been demonstrated and investigated on Si (111) substrates. Nanoscale overgrowth is a promising method to improve the quality of GaN semiconductor materials for the commercialization of GaN devices on Si substrates. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.||Source Title:||Physica Status Solidi (C) Current Topics in Solid State Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/84059||ISSN:||18626351||DOI:||10.1002/pssc.200778509|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 25, 2021
WEB OF SCIENCETM
checked on Feb 17, 2021
checked on Feb 15, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.