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|Title:||Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth||Authors:||Zang, K.Y.
|Issue Date:||2008||Citation:||Zang, K.Y., Chua, S.J. (2008). Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth. Physica Status Solidi (C) Current Topics in Solid State Physics 5 (6) : 1585-1588. ScholarBank@NUS Repository. https://doi.org/10.1002/pssc.200778509||Abstract:||Nanoscale laterally epitaxial overgrown (NLEO) GaN layers were investigated on Si (111) substrate. Nanoporous SiO2 films on the surfaces of GaN/Si (111) were fabricated by inductively coupled plasma etching using anodic alumina templates as etch masks. GaN was grown over the nanoporous SiO 2 layer using metalorganic chemical vapor deposition. Supersaturation of the source material was investigated to realize a continuous and smooth film. NLEO GaN layers were found to result in a significant reduction of threading dislocation density ∼108 cm-2, characterized by atomic force microscopy and cross-sectional transmission electron microscopy. High quality GaN nanorod arrays has also been demonstrated and investigated on Si (111) substrates. Nanoscale overgrowth is a promising method to improve the quality of GaN semiconductor materials for the commercialization of GaN devices on Si substrates. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.||Source Title:||Physica Status Solidi (C) Current Topics in Solid State Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/84059||ISSN:||18626351||DOI:||10.1002/pssc.200778509|
|Appears in Collections:||Staff Publications|
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