Optoelectronic monolithic integration of waveguided Metal-Germanium-Metal Photodetector and Ge CMOSFETs on SOI wafer

Abstract

We demonstrate monolithic integration of waveguided Metal-Germanium -Metal photodetector (WG-MGM-PD) and Ge CMOS with high-k dielectric and metal gate on SOI wafer using novel epi-growth technique. WG-MGM-PD achieves a responsivity of 0.6AZW and speed (f3dB) of 17.4GHz. Ge CMOS with ultra-thin EOT (1.4nm) was demonstrated with 2 times hole mobility improvement over the Si universal mobility and very low gate leakage current (10 -5∼10-4A/cm2). ©The Electrochemical Society.