Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3487588
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dc.titleOptoelectronic monolithic integration of waveguided Metal-Germanium-Metal Photodetector and Ge CMOSFETs on SOI wafer
dc.contributor.authorZang, H.
dc.contributor.authorWang, J.
dc.contributor.authorLo, G.Q.
dc.contributor.authorLee, S.J.
dc.date.accessioned2014-10-07T04:48:19Z
dc.date.available2014-10-07T04:48:19Z
dc.date.issued2010
dc.identifier.citationZang, H., Wang, J., Lo, G.Q., Lee, S.J. (2010). Optoelectronic monolithic integration of waveguided Metal-Germanium-Metal Photodetector and Ge CMOSFETs on SOI wafer. ECS Transactions 33 (6) : 573-577. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3487588
dc.identifier.isbn9781566778251
dc.identifier.issn19385862
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84058
dc.description.abstractWe demonstrate monolithic integration of waveguided Metal-Germanium -Metal photodetector (WG-MGM-PD) and Ge CMOS with high-k dielectric and metal gate on SOI wafer using novel epi-growth technique. WG-MGM-PD achieves a responsivity of 0.6AZW and speed (f3dB) of 17.4GHz. Ge CMOS with ultra-thin EOT (1.4nm) was demonstrated with 2 times hole mobility improvement over the Si universal mobility and very low gate leakage current (10 -5∼10-4A/cm2). ©The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.3487588
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1149/1.3487588
dc.description.sourcetitleECS Transactions
dc.description.volume33
dc.description.issue6
dc.description.page573-577
dc.identifier.isiut000314957600059
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