Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.egypro.2012.02.009
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dc.titleOptimised antireflection coatings using silicon nitride on textured silicon surfaces based on measurements and multidimensional modelling
dc.contributor.authorDuttagupta, S.
dc.contributor.authorMa, F.
dc.contributor.authorHoex, B.
dc.contributor.authorMueller, T.
dc.contributor.authorAberle, A.G.
dc.date.accessioned2014-10-07T04:48:18Z
dc.date.available2014-10-07T04:48:18Z
dc.date.issued2012
dc.identifier.citationDuttagupta, S., Ma, F., Hoex, B., Mueller, T., Aberle, A.G. (2012). Optimised antireflection coatings using silicon nitride on textured silicon surfaces based on measurements and multidimensional modelling. Energy Procedia 15 : 78-83. ScholarBank@NUS Repository. https://doi.org/10.1016/j.egypro.2012.02.009
dc.identifier.issn18766102
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84057
dc.description.abstractPlasma-deposited silicon nitride (a-SiN x:H, or briefly, SiNx) is currently the state-of-the-art antireflection coating for silicon wafer solar cells. It simultaneously reduces front-side optical reflection and provides surface and bulk passivation. Silicon nitride films with higher refractive index typically provide a higher level of crystalline silicon surface passivation in the as-deposited state, but the resulting solar cells suffer from a degraded blue response as the films become more absorbing. Hence, it is important to consider all loss mechanisms while optimising SiNx antireflection coatings for silicon wafer solar cells. In this work, the refractive index (n) of the SiNx films is varied from 1.9 to 2.7. The reflection and absorption losses of textured Si wafers coated with various SiNx films are quantified using 2D modelling. It is shown that SiNx films with n = 2.0 (at λ = 633.3 nm) and thickness of 70 nm provide a weighted average reflectance (WAR 1000) of less than 2.5 % and a weighted average transmission (WAT 1000) of more than 97 % on textured mono-Si wafers, combined with a very low saturation current density of 100 fA/cm on 70 Ω/sq n + layers. This shows that very good optical and excellent surface passivation quality can be realised on textured silicon wafers using inline deposited plasma silicon nitride. © 2011 Published by Elsevier Ltd.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.egypro.2012.02.009
dc.sourceScopus
dc.subject2D modelling
dc.subjectAntireflection coatings
dc.subjectOptical properties
dc.subjectSilicon nitride
dc.subjectSilicon wafer solar cells
dc.typeConference Paper
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.egypro.2012.02.009
dc.description.sourcetitleEnergy Procedia
dc.description.volume15
dc.description.page78-83
dc.identifier.isiut000306068100009
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