Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/84025
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dc.titleNovel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs
dc.contributor.authorKoh, S.-M.
dc.contributor.authorDing, Y.
dc.contributor.authorGuo, C.
dc.contributor.authorLeong, K.-C.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:47:55Z
dc.date.available2014-10-07T04:47:55Z
dc.date.issued2011
dc.identifier.citationKoh, S.-M.,Ding, Y.,Guo, C.,Leong, K.-C.,Samudra, G.S.,Yeo, Y.-C. (2011). Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs. Digest of Technical Papers - Symposium on VLSI Technology : 86-87. ScholarBank@NUS Repository.
dc.identifier.isbn9784863481640
dc.identifier.issn07431562
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84025
dc.description.abstractWe report the demonstration of a new contact resistance reduction technology for n+ Si S/D using Tellurium (Te) implant and segregation, achieving a low electron SBH of 0.11 eV. The Te implant reduced contact resistance in n-FinFETs by 40 %. When integrated in a process flow where Te is also introduced into the gate, improvement in gate electrostatic control is observed, leading to an improvement in ballistic efficiency. At I Off of 100 nA/μm, Te implant increases IOn by 22 % as compared with control FinFETs without Te implant. © 2011 JSAP (Japan Society of Applied Physi.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleDigest of Technical Papers - Symposium on VLSI Technology
dc.description.page86-87
dc.description.codenDTPTE
dc.identifier.isiutNOT_IN_WOS
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