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|Title:||Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs||Authors:||Kong, E.
|Issue Date:||2013||Citation:||Kong, E.,Gong, X.,Guo, P.,Liu, B.,Yeo, Y.-C. (2013). Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs. 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2013.6545609||Abstract:||A novel technique for doping the source/drain or source/drain extension regions of InGaAs MOSFETs was developed based on silane treatment and laser anneal. This doping technique has the potential to provide conformal, ultra-shallow, and very abrupt n++ junctions while being free from implant damage, and is first demonstrated in planar InGaAs MOSFETs. © 2013 IEEE.||Source Title:||2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013||URI:||http://scholarbank.nus.edu.sg/handle/10635/84023||ISBN:||9781467330817||DOI:||10.1109/VLSI-TSA.2013.6545609|
|Appears in Collections:||Staff Publications|
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