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|Title:||Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention||Authors:||Lai, C.H.
|Issue Date:||2005||Citation:||Lai, C.H.,Chin, A.,Chiang, K.C.,Yoo, W.J.,Cheng, C.F.,McAlister, S.P.,Chi, C.C.,Wu, P. (2005). Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large ΔVth and good retention. Digest of Technical Papers - Symposium on VLSI Technology 2005 : 210-211. ScholarBank@NUS Repository. https://doi.org/10.1109/.2005.1469271||Abstract:||Using the strong trapping capability of novel AlN (κ=10), low voltage drop in high-κ layers and high workfunction IrO2 with low leakage current, the SiO2/AlN/HfAlO(κ=17)/IrO2 device shows good 85°C memory integrity of fast 100μs erase, large 3.7V ΔVth and 1.9V extrapolated memory window for 10-year retention at low 13V program/erase. These increase to 5.5V ΔVth and 3.4V for 85°C 10-year retention at 1ms erase.||Source Title:||Digest of Technical Papers - Symposium on VLSI Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/84022||ISSN:||07431562||DOI:||10.1109/.2005.1469271|
|Appears in Collections:||Staff Publications|
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