Please use this identifier to cite or link to this item:
|Title:||Novel selenium implant and segregation for reduction of effective Schottky barrier height in NiGe/n-Ge contacts||Authors:||Tong, Y.
|Issue Date:||2012||Citation:||Tong, Y.,Liu, B.,Lim, P.S.Y.,Zhou, Q.,Yeo, Y.-C. (2012). Novel selenium implant and segregation for reduction of effective Schottky barrier height in NiGe/n-Ge contacts. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2012.6210172||Abstract:||We report the demonstration of a new effective Schottky barrier height (Θ Bn) reduction technology for NiGe/n-type Germanium (n-Ge) contacts using ion implantation of selenium (Se) or sulfur (S) followed by their segregation at the NiGe/n-Ge interface. Both Se and S are found to segregate at NiGe/n-Ge interface after germanide formation, giving Θ Bn as low as ∼0.1 eV. Nickel monogermanide was formed for samples annealed at 350°C for 30 s. In addition, both Se and S implants cause surface amorphization which possibly leads to improved uniformity of NiGe thickness. © 2012 IEEE.||Source Title:||International Symposium on VLSI Technology, Systems, and Applications, Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/84021||ISBN:||9781457720840||ISSN:||19308868||DOI:||10.1109/VLSI-TSA.2012.6210172|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 24, 2020
checked on Mar 29, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.