Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSI-TSA.2012.6210172
Title: Novel selenium implant and segregation for reduction of effective Schottky barrier height in NiGe/n-Ge contacts
Authors: Tong, Y.
Liu, B.
Lim, P.S.Y.
Zhou, Q. 
Yeo, Y.-C. 
Issue Date: 2012
Citation: Tong, Y.,Liu, B.,Lim, P.S.Y.,Zhou, Q.,Yeo, Y.-C. (2012). Novel selenium implant and segregation for reduction of effective Schottky barrier height in NiGe/n-Ge contacts. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2012.6210172
Abstract: We report the demonstration of a new effective Schottky barrier height (Θ Bn) reduction technology for NiGe/n-type Germanium (n-Ge) contacts using ion implantation of selenium (Se) or sulfur (S) followed by their segregation at the NiGe/n-Ge interface. Both Se and S are found to segregate at NiGe/n-Ge interface after germanide formation, giving Θ Bn as low as ∼0.1 eV. Nickel monogermanide was formed for samples annealed at 350°C for 30 s. In addition, both Se and S implants cause surface amorphization which possibly leads to improved uniformity of NiGe thickness. © 2012 IEEE.
Source Title: International Symposium on VLSI Technology, Systems, and Applications, Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/84021
ISBN: 9781457720840
ISSN: 19308868
DOI: 10.1109/VLSI-TSA.2012.6210172
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