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|Title:||Novel multi-level PCRAM cell with Ta2O5 barrier layer in between a graded Ge2Sb2Te5 stack||Authors:||Gyanathan, A.
|Issue Date:||2011||Citation:||Gyanathan, A.,Yeo, Y.-C. (2011). Novel multi-level PCRAM cell with Ta2O5 barrier layer in between a graded Ge2Sb2Te5 stack. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 62-63. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2011.5872233||Abstract:||We report a novel multi-level phase change random access memory (PCRAM) cell with a graded Ge2Sb2Te5 (GST) structure which enables multi-bit, high density storage. This work delves into the mechanism of the multilevel switching behaviour with both electrical as well as thermal analyses. © 2011 IEEE.||Source Title:||International Symposium on VLSI Technology, Systems, and Applications, Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/84019||ISBN:||9781424484928||DOI:||10.1109/VTSA.2011.5872233|
|Appears in Collections:||Staff Publications|
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