Please use this identifier to cite or link to this item:
https://doi.org/10.1109/VTSA.2011.5872238
DC Field | Value | |
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dc.title | New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs | |
dc.contributor.author | Koh, S.-M. | |
dc.contributor.author | Kong, E.Y.J. | |
dc.contributor.author | Liu, B. | |
dc.contributor.author | Ng, C.-M. | |
dc.contributor.author | Liu, P. | |
dc.contributor.author | Mo, Z.-Q. | |
dc.contributor.author | Leong, K.-C. | |
dc.contributor.author | Samudra, G.S. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:47:45Z | |
dc.date.available | 2014-10-07T04:47:45Z | |
dc.date.issued | 2011 | |
dc.identifier.citation | Koh, S.-M.,Kong, E.Y.J.,Liu, B.,Ng, C.-M.,Liu, P.,Mo, Z.-Q.,Leong, K.-C.,Samudra, G.S.,Yeo, Y.-C. (2011). New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETs. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 74-75. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VTSA.2011.5872238" target="_blank">https://doi.org/10.1109/VTSA.2011.5872238</a> | |
dc.identifier.isbn | 9781424484928 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/84010 | |
dc.description.abstract | We report the demonstration of a new contact resistance reduction technology for Si:C S/D using Tellurium (Te) implant and segregation. When integrated in a novel process flow featuring a single-metal platinum-based silicide (PtSi) contact technology, independent control of SBH in n- and p-FinFETs can be achieved. A low electron SBH of 120 meV is attained for n-FinFETs with Si:C S/D using PtSi and Te segregation, giving an I Dsat enhancement of 22 % in comparison with controls without Te implant. © 2011 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/VTSA.2011.5872238 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/VTSA.2011.5872238 | |
dc.description.sourcetitle | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | |
dc.description.page | 74-75 | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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