Please use this identifier to cite or link to this item: https://doi.org/10.1109/IPFA.2008.4588178
DC FieldValue
dc.titleNear-infrared spectroscopic photon emission microscopy of 0.13 μm silicon nMOSFETs and pMOSFETs
dc.contributor.authorTan, S.L.
dc.contributor.authorTeo, J.K.J.
dc.contributor.authorToh, K.H.
dc.contributor.authorIsakov, D.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorKoh, L.S.
dc.contributor.authorChua, C.M.
dc.contributor.authorPhang, J.C.H.
dc.date.accessioned2014-10-07T04:47:40Z
dc.date.available2014-10-07T04:47:40Z
dc.date.issued2008
dc.identifier.citationTan, S.L.,Teo, J.K.J.,Toh, K.H.,Isakov, D.,Chan, D.S.H.,Koh, L.S.,Chua, C.M.,Phang, J.C.H. (2008). Near-infrared spectroscopic photon emission microscopy of 0.13 μm silicon nMOSFETs and pMOSFETs. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IPFA.2008.4588178" target="_blank">https://doi.org/10.1109/IPFA.2008.4588178</a>
dc.identifier.isbn1424420393
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84002
dc.description.abstractNear-infrared photon emission spectra were obtained from the frontside of silicon nMOSFETs and pMOSFETs with a gate length of 0.13 μm and biased into saturation. These spectra were obtained using a high sensitivity in-lens spectroscopic photon emission microscope. Frontside NIR photon emission spectroscopy are performed on 0.13 μm saturated nMOSFETs and pMOSFETs at different gate and drain bias. The nMOSFETs photon emission spectra obtained are significantly different from some previously reported photon emission spectra. The NIR photon emission spectra of the nMOSFETs and pMOSFETs have similar peaks and suggest that the electric field condition in the channels of the nMOSFETs and pMOSFETs are similar.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IPFA.2008.4588178
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/IPFA.2008.4588178
dc.description.sourcetitleProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
dc.description.page-
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.