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|Title:||Multiple-gate In 0.53Ga 0.47As Channel n-MOSFETs with self-aligned Ni-InGaAs contacts||Authors:||Zhang, X.
|Issue Date:||2012||Citation:||Zhang, X., Guo, H.X., Gong, X., Guo, C., Yeo, Y.-C. (2012). Multiple-gate In 0.53Ga 0.47As Channel n-MOSFETs with self-aligned Ni-InGaAs contacts. ECS Transactions 45 (4) : 209-216. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3700470||Abstract:||Sub-100 nm multiple-gate In 0.53Ga 0.47As channel n-MOSFETs with self-aligned Ni-InGaAs contacts were demonstrated for the first time. With self-aligned Ni-InGaAs contacts formed on in-situ doped n ++ In 0.53Ga 0.47As source and drain, the device exhibits low series resistance of 364 Ω·μm. The multiple-gate device with 50 nm channel length has a drive current of more than 411 μA/μm at V D = 0.7 V and V G = 0.7 V. The device also shows a peak extrinsic transconductance G m of 590 μS/μm at V D = 0.5 V. ©The Electrochemical Society.||Source Title:||ECS Transactions||URI:||http://scholarbank.nus.edu.sg/handle/10635/83992||ISBN:||9781566779562||ISSN:||19385862||DOI:||10.1149/1.3700470|
|Appears in Collections:||Staff Publications|
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