Please use this identifier to cite or link to this item:
https://doi.org/10.1149/1.3700470
Title: | Multiple-gate In 0.53Ga 0.47As Channel n-MOSFETs with self-aligned Ni-InGaAs contacts | Authors: | Zhang, X. Guo, H.X. Gong, X. Guo, C. Yeo, Y.-C. |
Issue Date: | 2012 | Citation: | Zhang, X., Guo, H.X., Gong, X., Guo, C., Yeo, Y.-C. (2012). Multiple-gate In 0.53Ga 0.47As Channel n-MOSFETs with self-aligned Ni-InGaAs contacts. ECS Transactions 45 (4) : 209-216. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3700470 | Abstract: | Sub-100 nm multiple-gate In 0.53Ga 0.47As channel n-MOSFETs with self-aligned Ni-InGaAs contacts were demonstrated for the first time. With self-aligned Ni-InGaAs contacts formed on in-situ doped n ++ In 0.53Ga 0.47As source and drain, the device exhibits low series resistance of 364 Ω·μm. The multiple-gate device with 50 nm channel length has a drive current of more than 411 μA/μm at V D = 0.7 V and V G = 0.7 V. The device also shows a peak extrinsic transconductance G m of 590 μS/μm at V D = 0.5 V. ©The Electrochemical Society. | Source Title: | ECS Transactions | URI: | http://scholarbank.nus.edu.sg/handle/10635/83992 | ISBN: | 9781566779562 | ISSN: | 19385862 | DOI: | 10.1149/1.3700470 |
Appears in Collections: | Staff Publications |
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