Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.3700224
Title: | Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatment | Authors: | Lim, P.S.Y. Zhi Chi, D. Chong Lim, P. Yeo, Y.-C. |
Issue Date: | 1-Apr-2012 | Citation: | Lim, P.S.Y., Zhi Chi, D., Chong Lim, P., Yeo, Y.-C. (2012-04-01). Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatment. Journal of Applied Physics 111 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3700224 | Abstract: | Modulation of effective electron Schottky Barrier Height (φ B n,eff) by sulfur (S) donor-like traps was achieved through the use of pre-silicide ammonium sulfide treatment. The mechanisms responsible for the reduction of φ B n,eff were elucidated through an analysis of current-voltage measurements taken at various temperatures. Owing to the different physical locations of the S donor-like traps near the metal/semiconductor junction, e.g., at the interface and in the depletion region, mechanisms such as trap-assisted tunneling (TAT) and generation of electron-hole pairs can participate in the carrier transport, and be more dominant in the low temperature regime for reducing φ B n,eff. © 2012 American Institute of Physics. | Source Title: | Journal of Applied Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/83974 | ISSN: | 00218979 | DOI: | 10.1063/1.3700224 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
8
checked on Jan 25, 2021
WEB OF SCIENCETM
Citations
8
checked on Jan 25, 2021
Page view(s)
49
checked on Jan 18, 2021
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.