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|Title:||Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatment||Authors:||Lim, P.S.Y.
Zhi Chi, D.
Chong Lim, P.
|Issue Date:||1-Apr-2012||Citation:||Lim, P.S.Y., Zhi Chi, D., Chong Lim, P., Yeo, Y.-C. (2012-04-01). Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatment. Journal of Applied Physics 111 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3700224||Abstract:||Modulation of effective electron Schottky Barrier Height (φ B n,eff) by sulfur (S) donor-like traps was achieved through the use of pre-silicide ammonium sulfide treatment. The mechanisms responsible for the reduction of φ B n,eff were elucidated through an analysis of current-voltage measurements taken at various temperatures. Owing to the different physical locations of the S donor-like traps near the metal/semiconductor junction, e.g., at the interface and in the depletion region, mechanisms such as trap-assisted tunneling (TAT) and generation of electron-hole pairs can participate in the carrier transport, and be more dominant in the low temperature regime for reducing φ B n,eff. © 2012 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/83974||ISSN:||00218979||DOI:||10.1063/1.3700224|
|Appears in Collections:||Staff Publications|
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