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Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSI-TSA.2012.6210151
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dc.titleMetal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor
dc.contributor.authorWang, L.
dc.contributor.authorHan, G.
dc.contributor.authorSu, S.
dc.contributor.authorZhou, Q.
dc.contributor.authorYang, Y.
dc.contributor.authorGuo, P.
dc.contributor.authorWang, W.
dc.contributor.authorTong, Y.
dc.contributor.authorLim, P.S.Y.
dc.contributor.authorXue, C.
dc.contributor.authorWang, Q.
dc.contributor.authorCheng, B.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:47:00Z
dc.date.available2014-10-07T04:47:00Z
dc.date.issued2012
dc.identifier.citationWang, L.,Han, G.,Su, S.,Zhou, Q.,Yang, Y.,Guo, P.,Wang, W.,Tong, Y.,Lim, P.S.Y.,Xue, C.,Wang, Q.,Cheng, B.,Yeo, Y.-C. (2012). Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VLSI-TSA.2012.6210151" target="_blank">https://doi.org/10.1109/VLSI-TSA.2012.6210151</a>
dc.identifier.isbn9781457720840
dc.identifier.issn19308868
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83944
dc.description.abstractWe report a novel metal stanogermanide contact metallization process for high-mobility germanium-tin (Ge 0.947Sn 0.053 or GeSn) channel p-MOSFETs. Nickel-Platinum (NiPt) alloy was used to react with GeSn to form a multi-phase Ni and Pt stanogermanide [NiGeSn+Pt x(GeSn) y] contact on epitaxial Ge 0.947Sn 0.053. Rapid thermal annealing of co-sputtered Ni and Pt on GeSn/Ge (100) at temperatures from 350°C to 550°C in N 2 was used for the stanogermanide formation. Compared with nickel stanogermanide (NiGeSn) contact, the Pt-incorporated contact, i.e. NiGeSn+Pt x(GeSn) y, exhibits enhanced thermal stability in a wide range of formation temperatures. © 2012 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/VLSI-TSA.2012.6210151
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/VLSI-TSA.2012.6210151
dc.description.sourcetitleInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
dc.description.page-
dc.identifier.isiutNOT_IN_WOS
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