Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/83938
DC FieldValue
dc.titleMaterial and electrical characterization of nickel silicide-carbon as contact metal to silicon-carbon source and drain stressors
dc.contributor.authorLee, R.T.P.
dc.contributor.authorYang, L.-T.
dc.contributor.authorAng, K.-W.
dc.contributor.authorLiow, T.-Y.
dc.contributor.authorTan, K.-M.
dc.contributor.authorWong, A.S.-W.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorChi, D.-Z.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:46:56Z
dc.date.available2014-10-07T04:46:56Z
dc.date.issued2007
dc.identifier.citationLee, R.T.P.,Yang, L.-T.,Ang, K.-W.,Liow, T.-Y.,Tan, K.-M.,Wong, A.S.-W.,Samudra, G.S.,Chi, D.-Z.,Yeo, Y.-C. (2007). Material and electrical characterization of nickel silicide-carbon as contact metal to silicon-carbon source and drain stressors. Materials Research Society Symposium Proceedings 995 : 61-66. ScholarBank@NUS Repository.
dc.identifier.isbn9781605604275
dc.identifier.issn02729172
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83938
dc.description.abstractIn this paper, the material and electrical characteristics of Nickel-Silicon-Carbon (NiSi:C) films were investigated for the first time to ascertain the compatibility of NiSi:C contacts to silicon-carbon (Si:C) source/drain stressors. The incorporation of 1 atomic percent of carbon was found to increase both the Ni2Si-to-NiSi and NiSi-to-NiSi2 transformation temperatures. Our results show that the incorporation of carbon stabilizes the interfacial and surface morphology of NiSi :C films. We speculate that the incorporated carbon segregates into the NiSi :C grain boundaries and suppresses film agglomeration and NiSi-to-NiSi2 phase transformation. X-ray diffraction analysis further revealed that the formed NiSi:C films possessed a preferred orientation. Current-voltage measurements for NiSi and NiSi:C n+/p junctions exhibit similar cumulative distribution for junction leakage indicating that carbon incorporation does not have a detrimental impact on the n+/p junction integrity. Our results suggest that NiSi:C is a suitable self-aligned contact metal silicide to n-channel MOSFETs with SiC S/D stressors in a similar manner to the way in which NiSiGe is used for p-channel MOSFETs with SiGe S/D stressors. © 2007 Materials Research Society.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleMaterials Research Society Symposium Proceedings
dc.description.volume995
dc.description.page61-66
dc.description.codenMRSPD
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Page view(s)

47
checked on Oct 27, 2019

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.