Please use this identifier to cite or link to this item: https://doi.org/10.1109/NANO.2005.1500716
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dc.titleMagnetoelectronic properties of cobalt doped half metallic Fe 3O4
dc.contributor.authorTripathy, D.
dc.contributor.authorAdeyeye, A.O.
dc.date.accessioned2014-10-07T04:46:51Z
dc.date.available2014-10-07T04:46:51Z
dc.date.issued2005
dc.identifier.citationTripathy, D.,Adeyeye, A.O. (2005). Magnetoelectronic properties of cobalt doped half metallic Fe 3O4. 2005 5th IEEE Conference on Nanotechnology 1 : 321-323. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/NANO.2005.1500716" target="_blank">https://doi.org/10.1109/NANO.2005.1500716</a>
dc.identifier.isbn0780391993
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83931
dc.description.abstractWe have investigated in a systematic way the effect of cobalt doping on the magnetoelectronic properties of half metallic Fe3O4 films fabricated on MgO (100) substrates using co-sputtering. We observed that the magnetic and transport properties of the doped films are markedly sensitive to the doping concentration of Co. For Co doping ≥ 33%, zero coercivity behavior was observed in the magnetization curves. Tunneling transport of electrons causes a spin-dependent magnetoresistance of -5.5% for Fe3O 4 films, which reduces to -2.4% for (Fe3O 4)0.67(Co)0.33 composite films. ©2005 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/NANO.2005.1500716
dc.sourceScopus
dc.subjectDoping
dc.subjectFe3O4
dc.subjectHalf Metals
dc.subjectSpin Polarization
dc.subjectVerwey Transition
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/NANO.2005.1500716
dc.description.sourcetitle2005 5th IEEE Conference on Nanotechnology
dc.description.volume1
dc.description.page321-323
dc.identifier.isiutNOT_IN_WOS
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