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|Title:||Magnetoelectronic properties of cobalt doped half metallic Fe 3O4||Authors:||Tripathy, D.
|Issue Date:||2005||Citation:||Tripathy, D.,Adeyeye, A.O. (2005). Magnetoelectronic properties of cobalt doped half metallic Fe 3O4. 2005 5th IEEE Conference on Nanotechnology 1 : 321-323. ScholarBank@NUS Repository. https://doi.org/10.1109/NANO.2005.1500716||Abstract:||We have investigated in a systematic way the effect of cobalt doping on the magnetoelectronic properties of half metallic Fe3O4 films fabricated on MgO (100) substrates using co-sputtering. We observed that the magnetic and transport properties of the doped films are markedly sensitive to the doping concentration of Co. For Co doping ≥ 33%, zero coercivity behavior was observed in the magnetization curves. Tunneling transport of electrons causes a spin-dependent magnetoresistance of -5.5% for Fe3O 4 films, which reduces to -2.4% for (Fe3O 4)0.67(Co)0.33 composite films. ©2005 IEEE.||Source Title:||2005 5th IEEE Conference on Nanotechnology||URI:||http://scholarbank.nus.edu.sg/handle/10635/83931||ISBN:||0780391993||DOI:||10.1109/NANO.2005.1500716|
|Appears in Collections:||Staff Publications|
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