Please use this identifier to cite or link to this item: https://doi.org/10.1109/NANO.2005.1500716
Title: Magnetoelectronic properties of cobalt doped half metallic Fe 3O4
Authors: Tripathy, D. 
Adeyeye, A.O. 
Keywords: Doping
Fe3O4
Half Metals
Spin Polarization
Verwey Transition
Issue Date: 2005
Citation: Tripathy, D.,Adeyeye, A.O. (2005). Magnetoelectronic properties of cobalt doped half metallic Fe 3O4. 2005 5th IEEE Conference on Nanotechnology 1 : 321-323. ScholarBank@NUS Repository. https://doi.org/10.1109/NANO.2005.1500716
Abstract: We have investigated in a systematic way the effect of cobalt doping on the magnetoelectronic properties of half metallic Fe3O4 films fabricated on MgO (100) substrates using co-sputtering. We observed that the magnetic and transport properties of the doped films are markedly sensitive to the doping concentration of Co. For Co doping ≥ 33%, zero coercivity behavior was observed in the magnetization curves. Tunneling transport of electrons causes a spin-dependent magnetoresistance of -5.5% for Fe3O 4 films, which reduces to -2.4% for (Fe3O 4)0.67(Co)0.33 composite films. ©2005 IEEE.
Source Title: 2005 5th IEEE Conference on Nanotechnology
URI: http://scholarbank.nus.edu.sg/handle/10635/83931
ISBN: 0780391993
DOI: 10.1109/NANO.2005.1500716
Appears in Collections:Staff Publications

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