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Title: Low noise and high gain RF MOSFETs on plastic substrates
Authors: Kao, H.L.
Chin, A. 
Huang, C.C.
Hung, B.F.
Chiang, K.C.
Lai, Z.M.
McAlister, S.P.
Chi, C.C.
Keywords: Associated gain
RF Noise
Issue Date: 2005
Citation: Kao, H.L., Chin, A., Huang, C.C., Hung, B.F., Chiang, K.C., Lai, Z.M., McAlister, S.P., Chi, C.C. (2005). Low noise and high gain RF MOSFETs on plastic substrates. IEEE MTT-S International Microwave Symposium Digest 2005 : 295-298. ScholarBank@NUS Repository.
Abstract: A low minimum noise figure (NF min) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 μm RF MOSFETs on plastic, made by substrate thinning (∼30 μm), transfer and bonding. The performance can be further improved to 0.96 dB NF min and 14.1 dB associated gain at 10 GHz, under applied tensile strain, using flexible Si on plastic. A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate. © 2005 IEEE.
Source Title: IEEE MTT-S International Microwave Symposium Digest
ISBN: 0780388461
ISSN: 0149645X
DOI: 10.1109/MWSYM.2005.1516584
Appears in Collections:Staff Publications

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