Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.egypro.2013.05.050
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dc.titleLaser chemical processing (LCP) of poly-silicon thin film on glass substrates
dc.contributor.authorVirasawmy, S.
dc.contributor.authorPalina, N.
dc.contributor.authorChakraborty, S.
dc.contributor.authorWidenborg, P.I.
dc.contributor.authorHoex, B.
dc.contributor.authorAberle, A.G.
dc.date.accessioned2014-10-07T04:46:19Z
dc.date.available2014-10-07T04:46:19Z
dc.date.issued2013
dc.identifier.citationVirasawmy, S., Palina, N., Chakraborty, S., Widenborg, P.I., Hoex, B., Aberle, A.G. (2013). Laser chemical processing (LCP) of poly-silicon thin film on glass substrates. Energy Procedia 33 : 137-142. ScholarBank@NUS Repository. https://doi.org/10.1016/j.egypro.2013.05.050
dc.identifier.issn18766102
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83885
dc.description.abstractLaser chemical processing (LCP), based on the patented LaserMicroJet technology by Synova® S.A, was introduced by Fraunhofer Institute for Solar Energy Systems (Fraunhofer ISE), as a novel approach for selective doping for high efficiency (> 20%) silicon wafer solar cells. The technique consists of coupling a laser beam into a highly pressurised thin liquid jet. Total reflection inside the liquid jet enables laser light to be wave-guided towards the sample of interest. If the liquid contains a dopant source, selective doping is possible via the laser-induced, physical and chemical interactions of the substrate and doping medium. To date, this process was primarily investigated for silicon wafer solar cells. In this work, we report on a novel application of LCP for n-type doping of poly-silicon thin films on glass substrates. By using phosphoric acid as the doping medium, we have successfully realised n-type doping of poly-silicon thin films through LCP. Proof-of-principle experimental results are promising in terms of sheet resistance(< 5kΩ□) and active dopant concentration of 5×1018 to 1×10 19 cm-3 at a doping depth of less than 250 nm as measured by electrochemical capacitance-voltage (ECV) profiling. The obtained sheet resistance and doping concentration levels of LCP doped areas opens a new frontier for LCP processing. In the future, the LCP technique will be applied to fabricate back surface fields (BSF) for poly-silicon thin film solar cells. © 2013 The Authors. Published by Elsevier Ltd.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.egypro.2013.05.050
dc.sourceScopus
dc.subjectDoping
dc.subjectLaser chemical processing
dc.subjectPoly-silicon thin film
dc.typeConference Paper
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.egypro.2013.05.050
dc.description.sourcetitleEnergy Procedia
dc.description.volume33
dc.description.page137-142
dc.identifier.isiut000345398300018
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