Please use this identifier to cite or link to this item: https://doi.org/10.1166/jnn.2011.2704
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dc.titleIon beam modification of exchange coupling to fabricate patterned media
dc.contributor.authorRanjbar, M.
dc.contributor.authorPiramanayagam, S.N.
dc.contributor.authorSbiaa, R.
dc.contributor.authorAung, K.O.
dc.contributor.authorGuo, Z.B.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-10-07T04:46:07Z
dc.date.available2014-10-07T04:46:07Z
dc.date.issued2011-03
dc.identifier.citationRanjbar, M., Piramanayagam, S.N., Sbiaa, R., Aung, K.O., Guo, Z.B., Chong, T.C. (2011-03). Ion beam modification of exchange coupling to fabricate patterned media. Journal of Nanoscience and Nanotechnology 11 (3) : 2611-2614. ScholarBank@NUS Repository. https://doi.org/10.1166/jnn.2011.2704
dc.identifier.issn15334880
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83868
dc.description.abstractFor bit-patterned media, media with low remanent magnetization (M r) and high M r regions are needed for storing information, which is usually achieved by lithographically defining magnetic and non-magnetic regions. In this work, we have investigated the use of ion beam modification of media surface to define the low and high M r states using a medium that is at a low M r state to start with. The low M r state is achieved by the use of synthetic antiferromagnetic coupling obtained in Co-alloy/Ru/Co-alloy trilayer structured film. Local ion beam modification at 30 keV energy using Ga ions was used to create high M r regions. AFM and MFM observations indicated that patterned regions of low and high M r can be observed with ion beam irradiation. This technique is a potential method to achieve patterned media without the need of planarization techniques. © 2011 American Scientific Publishers.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1166/jnn.2011.2704
dc.sourceScopus
dc.subjectAntiferromagnetically coupled media
dc.subjectFocused ion beam
dc.subjectMagnetic materials
dc.subjectNanofabrication
dc.subjectPatterning
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1166/jnn.2011.2704
dc.description.sourcetitleJournal of Nanoscience and Nanotechnology
dc.description.volume11
dc.description.issue3
dc.description.page2611-2614
dc.identifier.isiut000288102300121
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