Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/83867
| Title: | Investigations of high endurance asymmetric phase change random access memory | Authors: | Hock, K.L. Shi, L. Zhao, R. Yang, H. Kian, G.L. Li, J. Tow, C.C. |
Issue Date: | 2008 | Citation: | Hock, K.L.,Shi, L.,Zhao, R.,Yang, H.,Kian, G.L.,Li, J.,Tow, C.C. (2008). Investigations of high endurance asymmetric phase change random access memory. Materials Research Society Symposium Proceedings 1072 : 132-137. ScholarBank@NUS Repository. | Abstract: | Asymmetric PCRAM cells were investigated and when the upper contact opening just offset from the bottom contact opening, the reset current was reduced tremendously compared to that of a conventional symmetrical structure due to the improved heat confinement. When the phase change material, Ge 2Sb2Te5 was sputtered with a N2/Ar gas flow ratio of 0.2, the asymmetric PCRAM cells lasted 2.4 × 1010 cycles and it lasted 10 times longer than N-doped symmetrical PCRAM cells. © 2008 Materials Research Society. | Source Title: | Materials Research Society Symposium Proceedings | URI: | http://scholarbank.nus.edu.sg/handle/10635/83867 | ISBN: | 9781605608518 | ISSN: | 02729172 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.