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|Title:||Investigations of high endurance asymmetric phase change random access memory||Authors:||Hock, K.L.
|Issue Date:||2008||Citation:||Hock, K.L.,Shi, L.,Zhao, R.,Yang, H.,Kian, G.L.,Li, J.,Tow, C.C. (2008). Investigations of high endurance asymmetric phase change random access memory. Materials Research Society Symposium Proceedings 1072 : 132-137. ScholarBank@NUS Repository.||Abstract:||Asymmetric PCRAM cells were investigated and when the upper contact opening just offset from the bottom contact opening, the reset current was reduced tremendously compared to that of a conventional symmetrical structure due to the improved heat confinement. When the phase change material, Ge 2Sb2Te5 was sputtered with a N2/Ar gas flow ratio of 0.2, the asymmetric PCRAM cells lasted 2.4 × 1010 cycles and it lasted 10 times longer than N-doped symmetrical PCRAM cells. © 2008 Materials Research Society.||Source Title:||Materials Research Society Symposium Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/83867||ISBN:||9781605608518||ISSN:||02729172|
|Appears in Collections:||Staff Publications|
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