Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1705590
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dc.titleInvestigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma
dc.contributor.authorChen, J.
dc.contributor.authorYoo, W.J.
dc.contributor.authorTan, Z.Y.L.
dc.contributor.authorWang, Y.
dc.contributor.authorChan, D.S.H.
dc.date.accessioned2014-10-07T04:46:03Z
dc.date.available2014-10-07T04:46:03Z
dc.date.issued2004-07
dc.identifier.citationChen, J., Yoo, W.J., Tan, Z.Y.L., Wang, Y., Chan, D.S.H. (2004-07). Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (4) : 1552-1558. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1705590
dc.identifier.issn07342101
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83862
dc.description.abstractThe etching properties of HfO based high-K dielectrics were investigated. The study was carried out by using inductively coupled plasma of Cl 2/HBr/CHF3/CF4/O2. It was The result show that the etching of HfON, HfSiO and HfAlO was strongly dependent on etching properties of each phase in the makeup of the films such as HfO 2 and HfN. It was also found that the fluorine containing plasmas were undesirable for etching of HfO based high-K devices.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.1705590
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1116/1.1705590
dc.description.sourcetitleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
dc.description.volume22
dc.description.issue4
dc.description.page1552-1558
dc.description.codenJVTAD
dc.identifier.isiut000223322000080
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